SI4816BDY_09 Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
I_F = 1.0 A
I_F = 1.0 A, T_J = 125 °C
V_R = 30 V
Maximum Reverse Leakage Current I_rm
V_R = 30 V, T_J = 100 °C
V_R = - 30 V, T_J = 125 °C
Junction Capacitance
C_T
V_R = 10 V
Min.
Typ.
Max.
Unit
0.47
0.50
V
0.36
0.42
0.004 0.100
0.7
10
mA
3.0
20
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
V_GS = 10 thru 4 V
30
25
20
15
10
3V
5
2V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
T_C = 125 °C
10
5
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
1200
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current
1000
800
600
400
200
0
0
C_iss
C_rss
C_oss
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
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