SI4622DY Datasheet, PDF (9/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4622DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
0.05
T_J = 150 °C
10
0.04
0.03
T_J = 25 °C
1
0.02
0.01
I_D = 8.6 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.00
0
4
8
12
16
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
1.8
8
1.6
6
1.4
I_D = 250 µA
4
1.2
1.0
2
0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
100 µs
Document Number: 68695
S09-0764-Rev. B, 04-May-09
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
BVDSS
DC
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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