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SI4622DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product
Si4622DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
RDS(on) (Ω)
30 0.0160 at VGS = 10 V
0.0186 at VGS = 4.5 V
30 0.0264 at VGS = 10 V
0.0290 at VGS = 4.5 V
ID (A)a
8.0e
8.0e
8.0e
8.0e
Qg (Typ.)
19
6
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET®
Power MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
APPLICATIONS
• Notebook Logic DC-DC
• Low Current DC-DC
D1
D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4622DY-T1-E3 (Lead (Pb)-free)
Si4622DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
30
V
VGS
± 20
± 16
TC = 25 °C
8e
8e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
8e
8b, c, e
6.7
6.7b, c
Pulsed Drain Current (10 µs Pulse Width)
TA = 70 °C
7.2b, c
5.3b, c
A
IDM
60
30
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.8
1.8b, c
2.6
1.7b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
25
31.2
15
11.2
mJ
TC = 25 °C
3.3
3.1
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.1
2.2b, c
2.0
2.0b, c
W
TA = 70 °C
1.4b, c
1.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
RthJA
RthJF
45
56
29
38
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Channel-2
Typ. Max.
55
62.5
33
40
Unit
°C/W
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
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