SI4622DY Datasheet, PDF (4/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4622DY
Vishay Siliconix
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
V_GS = 10 V thru 5 V
50
V_GS = 4 V
40
30
20
10
V_GS = 3 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
T_C = - 55 °C
1.6
T_C = 25 °C
1.2
0.8
0.4
T_C = 125 °C
0.0
0.0
0.7
1.4
2.1
2.8
3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.020
0.015
0.010
V_GS = 4.5 V
V_GS = 10 V
0.005
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 9.6 A
8
V_DS = 15 V
3000
C_iss
2500
2000
1500
1000
500
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
6
V_DS = 24 V
4
2
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
1.4
1.2
V_GS = 4.5 V
1.0 ^ID ^{= 8.9 A}
0.8
V_GS = 10 V, I_D = 9.6 A
0.6
- 50 - 25 0 25 50
75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 68695
S09-0764-Rev. B, 04-May-09