SI4622DY Datasheet, PDF (8/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4622DY
Vishay Siliconix
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
2.0
V_GS = 10 V thru 4 V
24
V_GS = 3 V
1.5
18
1.0
12
T_C = 25 °C
6
0
0
0.035
V_GS = 2 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0.0
0.0
1000
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.030
C_iss
800
0.025
0.020
V_GS = 4.5 V
V_GS = 10 V
600
400
200
C_oss
0.015
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 6.7 A
8
V_DS = 15 V
6
V_DS = 24 V
4
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.5
V_GS = 4.5 V, I_D = 6.4 A
1.2
V_GS = 10 V, I_D = 6.7 A
0.9
2
0
0
2
4
6
8
10 12 14
Q_g - Total Gate Charge (nC)
Gate Charge
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8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68695
S09-0764-Rev. B, 04-May-09