SI4622DY Datasheet, PDF (5/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
T_J = 150 °C
10
0.026
0.022
T_J = 25 °C
1
0.018
0.014
Si4622DY
Vishay Siliconix
I_D = 9.6 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-1
0.010
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
10-2
30
10^-3
30 V
10 V
20
10^-4
20 V
10
10^-5
10-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
0
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
BVDSS
DC
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
5