SI4622DY Datasheet, PDF (2/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4622DY
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
ΔV_DS/T_J
I_D = 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 1 mA
V_DS = V_GS, I_D = 1 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 0 V, V_GS = ± 16 V
V_DS = 30 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
On-State Drain Current^b
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 9.6 A
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 6.7 A
V_GS = 4.5 V, I_D = 8.9 A
V_GS = 4.5 V, I_D = 6.4 A
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 9.6 A
V_DS = 15 V, I_D = 6.7 A
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 15 V, V_GS = 10 V, I_D = 9.6 A
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 6.7 A
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 9.6 A
Q_gs
Channel-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 6.7 A
Gate Resistance
R_g
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
33
- 4.7
mV/°C
1.5
2.5
V
1
2.2
100
nA
100
0.04 0.2 mA
1
µA
4.4
44
mA
5
µA
25
A
20
0.0132 0.0160
0.022 0.0264
Ω
0.0155 0.0186
0.0240 0.0290
94
S
10
Ch-1
2458
Ch-2
760
Ch-1
385
pF
Ch-2
110
Ch-1
150
Ch-2
50
Ch-1
40
60
Ch-2
13.2 20
Ch-1
19
29
Ch-2
Ch-1
6
12
nC
8
Ch-2
2.1
Ch-1
6
Ch-2
1.4
Ch-1 0.26 1.3 2.6
Ω
Ch-2 0.62 3.1 6.2
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2
Document Number: 68695
S09-0764-Rev. B, 04-May-09