SI4622DY Datasheet, PDF (6/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4622DY
Vishay Siliconix
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
14
12
10
Package Limited
8
6
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
4
3
2
1
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
Document Number: 68695
S09-0764-Rev. B, 04-May-09