VS-40MT120UHAPBF Datasheet, PDF (8/13 Pages) Vishay Siliconix – IGBT MTP

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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_Cτ
τ_{2 τ 2}
Ri (°C/W) τi (sec)
0.024 0.00008
0.549 0.000098
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
3, 4
11
12
5, 6
9
10
2
T
R
1
Thermistor
option only for
40MT120UHTAPbF
7, 8
Fig. 25 - Electrical diagram
Revision: 18-Jun-15
8
Document Number: 94507
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