VS-40MT120UHAPBF Datasheet, PDF (7/13 Pages) Vishay Siliconix – IGBT MTP

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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
50
45
40
35
30
25
20
15
10
0
200 400 600 800 1000
dIF /dt (A/μs)
Fig. 19 - Typical Diode I_rr vs. dI_F/dt
V_CC = 600 V; V_GE = 15 V; I_CE = 40 A; T_J = 125 °C
10000
1000
100
Cies
Coes
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 21 - Typical Capacitance vs. V_CE
V_GE = 0 V; f = 1 MHz
5.0
60A
4.5
4.0
40A
3.5
3.0
2.5
2.0
50Ω _30Ω
20A
10 Ω _5.0Ω
1.5
1.0
0.5
0.0
0
200 400 600 800 1000 1200
dIF /dt (A/μs)
Fig. 20 - Typical Diode Q_rr vs. dI_F/dt
V_CC = 600 V; V_GE = 15 V; T_J = 125 °C
1
16
14
600V
12
10
8
6
4
2
0
0
100 200 300 400 500
Q _G, Total Gate Charge (nC)
Fig. 22 - Typical Gate Charge vs. V_GE
I_CE = 5.0 A; L = 600 μH
0.1 ^{D = 0.50}
0.20
0.10
0.05
0.01
0.02
0.01
0.001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_2τ2
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.043 0.001214}
τ_3τ3
0.105 0.044929
0.123 1.19.179777
0.0001
SINGLE PULSE
( THERMAL RESPONSE))
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 18-Jun-15
7
Document Number: 94507
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