VS-40MT120UHAPBF Datasheet, PDF (3/13 Pages) Vishay Siliconix – IGBT MTP

www.vishay.com
VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
DIODE SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I_C = 40 A
I_C = 80 A
Diode forward voltage drop
V_FM
I_C = 40 A, T_J = 125 °C
I_C = 80 A, T_J = 125 °C
I_C = 40 A, T_J = 150 °C
Reverse recovery energy of the diode E_rec
Diode reverse recovery time
t_rr
Peak reverse recovery current
I_rr
V_GE = 15 V, R_g = 5 , L = 200 μH
V_CC = 600 V, I_C = 40 A
T_J = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
2.98
3.90
3.08
4.29
3.12
574
120
43
MAX. UNITS
3.38
4.41
3.39
V
4.72
3.42
861 μJ
180 ns
65
A
THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)
PARAMETER
SYMBOL
TEST CONDITIONS
Resistance
Sensitivity index of the
thermistor material
R₀ ⁽¹⁾
 ⁽¹⁾⁽²⁾
Notes
(1) _{T0, T1 are thermistor´s temperatures}
(2)
R_-----0-
R₁
=
exp



--¹---
T₀
–
T^--1--₁^{- }
, temperature in Kelvin
T₀ = 25 °C
T₀ = 25 °C
T₁ = 85 °C
MIN.
-
TYP.
30
MAX. UNITS
-
k
-
4000
-
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Operating junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
T_J
T_Stg
R_thJC
-40
-
150
°C
-40
-
125
-
-
0.29
-
-
0.61 °C/W
Case to sink per module
Clearance ⁽¹⁾
Creepage ⁽²⁾
Mounting torque to heatsink
Weight
R_thCS Heatsink compound thermal conductivity = 1 W/mK -
0.06
-
External shortest distance in air between 2 terminals 5.5
-
Shortest distance along external surface of the
insulating material between 2 terminals
8
-
-
mm
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
3 ± 10 %
Nm
the spread of the compound. Lubricated threads.
66
g
Revision: 18-Jun-15
3
Document Number: 94507
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000