VS-40MT120UHAPBF Datasheet, PDF (5/13 Pages) Vishay Siliconix – IGBT MTP

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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 7 - Typical IGBT Output Characteristics
T_J = 125 °C; t_p = 80 μs
120
-40°C
100
25°C
125°C
80
60
40
20
0
0.0 1.0 2.0 3.0
VF (V)
4.0 5.0
Fig. 8 - Typical Diode Forward Characteristics
t_p = 80 μs
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 80A
ICE = 40A
ICE = 20A
10
15
20
VGE (V)
Fig. 9 - Typical V_CE vs. V_GE
T_J = - 40 °C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 80A
ICE = 40A
ICE = 20A
10
15
20
VGE (V)
Fig. 10 - Typical V_CE vs. V_GE
T_J = 25 °C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 80A
ICE = 40A
ICE = 20A
10
15
20
VGE (V)
Fig. 11 - Typical V_CE vs. V_GE
T_J = 125 °C
350
300
TJ = 25°C
TJ = 125°C
250
200
150
100
50
0
0
5
10
15
20
VGE (V)
Fig. 12 - Typical Transfer Characteristics
V_CE = 50 V; t_p = 10 μs
Revision: 18-Jun-15
5
Document Number: 94507
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