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| VS-40MT120UHAPBF Datasheet, PDF (2/13 Pages) Vishay Siliconix – IGBT MTP | |||
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www.vishay.com
VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter ï
breakdown voltage
Temperature coefficient ofï
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 μA
ïV(BR)CES/ïTJ VGE = 0 V, IC = 3 mA (25 °C to 125 °C)
VGE = 15 V, IC = 40 A
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 80 A
VGE = 15 V, IC = 40 A, TJ = 150 °C
VGE = 15 V, IC = 80 A, TJ = 150 °C
Gate threshold voltage
Temperature coefficient of ï
threshold voltage
VGE(th)
VGE(th)/ïTJ
VCE = VGE, IC = 500 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Transconductance
gfe
VCE = 50 V, IC = 40 A, PW = 80 μs
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
Zero gate voltage collector current
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+1.1
3.36
4.53
3.88
5.35
-
-12
35
-
0.4
0.2
-
MAX. UNITS
-
V
-
V/°C
3.59
4.91
4.10
V
5.68
6
-
mV/°C
-
S
250
μA
1.0
mA
10
± 250
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
Cies
Coes
Cres
RBSOA
SCSOA
IC = 40 A
VCC = 600 Vï
VGE = 15 V
VCC = 600 V, IC = 40 A, VGE = 15 V, ï
Rg = 5 ï, L = 200 μH, TJ = 25 °C, ï
energy losses include tail and diodeï
reverse recovery
VCC = 600 V, IC = 40 A, VGE = 15 V, ï
Rg = 5 ï, L = 200 μH, TJ = 125 °C, ï
energy losses include tail and diodeï
reverse recovery
VGE = 0 Vï
VCC = 30 Vï
f = 1.0 MHz
TJ = 150 °C, IC = 160 Aï
VCC = 1000 V, Vp = 1200 Vï
Rg = 5 ï, VGE = + 15 V to 0 V
TJ = 150 °C,ï
VCC = 900 V, Vp = 1200 Vï
Rg = 5 ï, VGE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
399
43
187
1.14
1.35
2.49
1.60
1.62
3.22
5521
380
171
MAX.
599
65
281
1.71
2.02
3.73
2.40
2.43
4.82
8282
570
257
UNITS
nC
mJ
pF
Fullsquare
10
-
-
μs
Revision: 18-Jun-15
2
Document Number: 94507
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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