VS-40MT120UHAPBF Datasheet, PDF (6/13 Pages) Vishay Siliconix – IGBT MTP

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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
4800
4200
3600
3000
2400
1800
1200
EON
600
0
0
EOFF
20
40
60
80
100
IC (A)
Fig. 13 - Typical Energy Loss vs. I_C
T_J = 125 °C; L = 250 μH; V_CE = 400 V
R_g = 5 ; V_GE = 15 V
1000
tdOFF
100
tR
tdON
10
0
tF
20
40
60
80
100
IC (A)
Fig. 14 - Typical Switching Time vs. I_C
T_J = 125 °C; L = 250 μH; V_CE = 400 V
R_g = 5 ; V_GE = 15 V
6000
5000
4000
EON
EOFF
3000
2000
1000
0
10 20 30 40 50 60
Rg (Ω)
Fig. 15 - Typical Energy Loss vs. R_g
T_J = 150 °C; L = 250 μH; V_CE = 600 V
I_CE = 40 A; V_GE = 15 V
10 000
1000
100
tdOFF
tdON
tR
tF
10
0
10 20 30 40 50 60
Rg (Ω)
Fig. 16 - Typical Switching Time vs. R_g
T_J = 150 °C; L = 250 μH; V_CE = 600 V
I_CE = 40 A; V_GE = 15 V
50
Rg = 5.0Ω
40
Rg = 10 Ω
30
Rg = 30 Ω
20
Rg = 50 Ω
10
0
10 20 30 40 50 60 70
IF (A)
Fig. 17 - Typical Diode I_rr vs. I_F
T_J = 125 °C
50
40
30
20
10
0
10 20 30 40 50 60
Rg (Ω)
Fig. 18 - Typical Diode I_rr vs. R_g
T_J = 125 °C; I_F = 40 A
Revision: 18-Jun-15
6
Document Number: 94507
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