VS-40MT120UHAPBF Datasheet, PDF (4/13 Pages) Vishay Siliconix – IGBT MTP

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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
10
1
0.1
0.01
1
10 μs
100 μs
10ms
DC
10
100
1000
VCE (V)
Fig. 3 - Forward SOA
T_C = 25 °C; T_J  150 °C
10000
1000
100
10
1
10
100
1000
VCE (V)
10 000
Fig. 4 - Reverse BIAS SOA
T_J = 150 °C; V_GE = 15 V
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typical IGBT Output Characteristics
T_J = - 40 °C; t_p = 80 μs
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typical IGBT Output Characteristics
T_J = 25 °C; t_p = 80 μs
Revision: 18-Jun-15
4
Document Number: 94507
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