SI4845DY Datasheet, PDF (8/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4845DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
3
10
1
1
0.1
20 V
10 V
0.1
0.01
0.001
SCHOTTKY
Forward Voltage Drop
T_J = 150_C
T_J = 25_C
0.0001
0
25
50
75
100 125 150
T_J – Junction Temperature (_C)
0.01
0
Capacitance
250
0.1
0.2
0.3 0.4
0.5 0.6
V_F – Forward Voltage Drop (V)
200
150
C_iss
100
50
0
0
4
8
12
16
20
V_KA – Reverse Voltage (V)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73415.
www.vishay.com
8
Document Number: 73415
S-51110—Rev. B, 13-Jun-05