SI4845DY Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4845DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
DV_DS/TJ
DV_GS(th)/TJ
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = –20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V, T_J = 75_C
V_DS w –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –2 A
V_GS = –2.5 V, I_D = –1 A
V_DS = –15 V, I_D = –2 A
–20
–0.5
–5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Drain-Source Body Diode Characteristics
V_DS = –10 V, V_GS = 0 V, f = 1 MHz
V_DS = –10 V, V_GS = –4.5 V, I_D = –4 A
f = 1 MHz
V_DD = –10 V, R_L = 2.5 W
I_D ^ –4 A, V_GEN = –4.5 V, R_g = 1 W
V_DD = –10 V, R_L = 2.5 W
I_D ^ –4 A, V_GEN = –10 V, R_g = 1 W
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
T_C = 25 _C
I_S = –1.9 A, V_GS = 0 V
I_F = –2 A, di/dt = 100 A/ms, T_J = 25 _C
Typ Max Unit
–25
2.6
0.175
0.285
3.5
V
–1.5
"100
–1
–10
0.210
0.345
mV/_C
V
nA
mA
A
W
S
312
63
pF
33
2.9
4.5
0.72
nC
0.65
5.5
W
8
13
40
60
17
26
11
18
ns
3
6
10
16
12
20
8
15
–2.7
A
–7
–0.85
–1.2
V
24
40
ns
14
20
nC
14
ns
10
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2
Document Number: 73415
S-51110—Rev. B, 13-Jun-05