SI4845DY Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4845DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
10
8
6
4
2
0
0.0
Output Characteristics
V_GS = 5 V
V_GS = 4.5 V
V_GS = 4 V
V_GS = 3.5 V
V_GS = 3 V
V_GS = 2.5 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
T_C = 125_C
0.2
25_C
–55_C
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.5
0.4
V_GS = 2.5 V
0.3
0.2
V_GS = 4.5 V
0.1
0.0
0
1
2
3
4
5
6
I_D – Drain Current (A)
Capacitance
450
400
350
C_iss
300
250
200
150
100
C_oss
50
0
0
C_rss
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
I_D = 4 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 15 V
On-Resistance vs. Junction Temperature
1.6
1.4
V_GS = 4.5 V
1.2
V_GS = 2.5 V
1.0
2
0.8
0
0.0
1.3
2.6
3.9
5.2
6.5
Q_g – Total Gate Charge (nC)
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4
0.6
–50.0 –25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0
T_J – Junction Temperature (_C)
Document Number: 73415
S-51110—Rev. B, 13-Jun-05