SI4845DY Datasheet, PDF (6/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4845DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
MOSFET
Power De-Rating, Junction-to-Foot
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Power De-Rating, Junction-to-Ambient
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
*The power dissipation P_b is based on T_J(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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6
Document Number: 73415
S-51110—Rev. B, 13-Jun-05