SI4845DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
Si4845DY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1 A
I_F = 1 A, T_J = 125_C
V_r = 30 V
V_r = 30 V, T_J = 75_C
V_r = 30 V, T_J = 125_C
V_r = 10 V
0.45
0.36
0.04
0.1
2
62
Max
0.50
0.42
0.1
2
10
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
www.vishay.com
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