SI4845DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
Si4845DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–20
r_DS(on) (W)
0.210 @ V_GS = –4.5 V
0.345 @ V_GS = –2.5 V
I_D (A)^a
– 2.7
–2.1
Q_g (Typ)
2.9
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
20
V_f (V)
Diode Forward Voltage
0.50 V @ 1 A
I_F (A)^a
2.4
A1
A2
S3
G4
SO-8
8K
7K
6D
5D
FEATURES
D LITTLE FOOTr Plus Power MOSFET
APPLICATIONS
D Asynchronous DC/DC Buck
S
G
Top View
D
Ordering Information: Si4845DY-T1—E3 (Lead (Pb)–Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
–20
V_KA
–20
V_GS
"12
Continuous Drain Current (T_J = 150_C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
T_C = 25_C
T_A = 25_C
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
– 2.7
–2.1
–2.1^{b, c}
–1.7^{b, c}
–7
–2.4
–1.9 ^{b, c}
– 1^b
–7
2.75
1.75
1.75^{b, c}
1.1^{b, c}
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes
a. Based on T_C = 25_C.
b. Surface Mounted on FR4 Board.
c. t v 10 sec.
d. Maximum under Steady State conditions is 120 _C/W.
Symbol
R_thJA
R_thJF
Typical
60
35
Maximum
71.5
45
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
COMPLIANT
K
A
Unit
V
A
W
_C
Unit
_C/W
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