SI4845DY Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
Si4845DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
MOSFET
On-Resistance vs. Gate-to-Source Voltage
1.0
T_J = 150_C
1
0.1
T_J = 25_C
0.8
T_A = 150_C
0.6
0.4
T_A = 25_C
0.2
0.01
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD – Source-to-Drain Voltage (V)
0.0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
I_D = 5 mA
0.0
–0.1
Single Pulse Power, Junction-to-Ambient
50
40
30
20
10
–0.2
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Ambient
10
*Limited by r_DS(on)
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25_C
dc
Single Pulse
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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