SI4833ADY Datasheet, PDF (8/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833ADY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3
10
1
0.1
20 V
10 V
0.01
1
T_J = 150 °C
0.1
0.001
T_J = 25 °C
0.0001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
250
0.01
0
0.1
0.2
0.3
0.4
0.5 0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
200
150
100
C_iss
50
0
0
4
8
12
16
20
V_KA - Reverse Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73627.
www.vishay.com
8
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10