SI4833ADY Datasheet, PDF (5/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.3
Si4833ADY
Vishay Siliconix
0.2
V_SD = 150 °C
V_SD = 25 °C
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.4
40
0.2
30
0.0 ^ID ^{= 250 µA}
20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10 _Limited
by R_DS(on)*
1
I_D(on)
Limited
1 ms
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
www.vishay.com
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