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| SI4833ADY Datasheet, PDF (2/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode | |||
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Si4833ADY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ïVDS/TJ
ïVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 75 °C
On-State Drain Currenta
ID(on)
VDS ï³ï - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.6 A
VGS = - 4.5 V, ID = - 2.8 A
Forward Transconductancea
Dynamicb
gfs
VDS = - 15 V, ID = - 3.6 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 3 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ï£ 300 µs, duty cycle ï£ 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 3 A
f = 1 MHz
VDD = - 15 V, RL = 7.5 ï
ID ï - 2 A, VGEN = - 4.5 V, Rg = 1 ï
VDD = - 15 V, RL = 7.5 ï
ID ï - 2 A, VGEN = - 10 V, Rg = 1 ï
TC = 25 °C
IS = - 1.4 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 30
-1
-5
Typ. Max. Unit
- 28
3.5
-2
0.059
0.090
7
- 2.5
± 100
-1
- 10
0.072
0.110
V
mV/°C
V
nA
µA
A
ï
S
380
750
100
pF
75
9.8
15
4.6
7.0
nC
1.4
2.4
8
16
ï
20
30
59
90
26
40
19
30
ns
7
14
11
17
19
30
8
15
- 4.6
A
- 20
- 0.8 - 1.2
V
23
40
ns
12
20
nC
10
ns
13
www.vishay.com
2
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
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