SI4833ADY Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833ADY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
- 30
R_DS(on) ()
0.072 at V_GS = - 10 V
0.110 at V_GS = - 4.5 V
I_D (A)^a
- 4.6
- 3.4
Q_g (Typ.)
- 4.6
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_F (V)
Diode Forward Voltage
0.50 V at 1 A
I_D (A)^a
2.4
A1
A2
S3
G4
SO-8
8^K
7K
6D
5D
S
K
G
Top View
Ordering Information: Si4833ADY-T1-E3 (Lead (Pb)-free)
Si4833ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T_J = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET and Schottky)
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_KA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
- 30
- 30
V
± 20
- 4.6
- 3.6
- 3.85^{b, c}
- 3.08^{b, c}
- 20
A
- 2.3
- 1.4^{b, c}
- 1.4^b
- 20
2.75
1.75
1.93^{b, c}
W
1.23^{b, c}
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)^{b, c, d}
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on FR4 board.
c. t  10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
Symbol
R_thJA
R_thJF
Typical
60
35
Maximum
65
45
Unit
°C/W
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