English
Language : 

SI4833ADY Datasheet, PDF (7/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode
◁
MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si4833ADY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
www.vishay.com
7
 ▷