SI4833ADY Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833ADY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
V_GS = 10 V thru 6 V
V_GS = 5 V
2.4
15
10
V_GS = 4 V
5
0
0.0
0.16
V_GS = 3 V
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.8
1.2
0.6
0.0
0.0
700
I_D = 125 °C
I_D = 25 °C
I_D = - 55 °C
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.14
0.12
0.10
V_GS = 4.5 V
0.08
0.06
V_GS = 10 V
0.04
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
600
500
C_iss
400
300
200
C_oss
100
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
1.6
V_DS = 15 V
I_D = 1.7 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0
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4
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10