SI4833ADY Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET with Schottky Diode

Si4833ADY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
I_F = 1 A
I_F = 1 A, T_J = 125 °C
V_R = 30 V
V_R = 30 V, T_J = 75 °C
Junction Capacitance
V_R = 30 V, T_J = 125 °C
C_T
V_R = 10 V
Min. Typ. Max. Unit
0.45 0.50
V
0.36 0.42
0.004 0.1
0.1
2
mA
3
20
62
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
www.vishay.com
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