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72173 Datasheet, PDF (8/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET
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Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =65_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
www.vishay.com
8
Document Number: 72173
S-32419—Rev. B, 24-Nov-03