72173 Datasheet, PDF (6/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
25
25
20
20
4V
15
15
10
10
5
0
0
0.10
3V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
0
0
800
N−CHANNEL
Transfer Characteristics
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
Capacitance
0.08
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.7 A
8
600
C_iss
400
200
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 7.7 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
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6
Document Number: 72173
S-32419—Rev. B, 24-Nov-03