72173 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
P-Channel
−30
N-Channel
30
r_DS(on) (W)
0.051 @ V_GS = −10 V
0.075 @ V_GS = −6 V
0.035 @ V_GS = 10 V
0.050 @ V_GS = 4.5 V
I_D (A)
−6.4
−5.3
7.7
6.5
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Backlight Inverter
D DC/DC Converter
− 4-Cell Battery
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S1
1
G1
3.30 mm
2
S2
3
G2
4
Bottom View
Ordering Information: Si7501DN-T1—E3
S₁
G₁
D
G₂
S₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
P-Channel
N-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"25
−6.4
−4.5
7.7
−5.1
−3.6
4.7
−25
−2.6
−1.3
2.6
3.1
1.6
3.1
3
1.0
2
−55 to 150
30
"20
5.4
4.3
25
1.3
1.6
1.0
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Case)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
32
65
5
Maximum
40
81
6.3
Unit
_C/W
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