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72173 Datasheet, PDF (7/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET | |||
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Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NâCHANNEL
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.16
TJ = 150_C
10
TJ = 25_C
0.12
0.08
ID = 7.7 A
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
50
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
0.2
40
â0.0
ID = 250 mA
30
â0.2
20
â0.4
â0.6
10
â0.8
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
10â3
10â2
10â1
1
10
Time (sec)
100 600
Safe Operating Area
100
rDS(on) Limited
IDM Limited
10
P(t) = 0.0001
1
0.1
0.01
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
VDS â Drain-to-Source Voltage (V)
Document Number: 72173
S-32419âRev. B, 24-Nov-03
www.vishay.com
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