72173 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.16
T_J = 150_C
10
0.12
I_D = 6.4 A
0.08
T_J = 25_C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
I_D = 250 mA
0.2
0.0
0.00
0
50
40
30
20
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
−0.2
10
−0.4
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−3
10^−2
10^−1
1
10
Time (sec)
100 600
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
10
P(t) = 0.0001
1
0.1
0.01
0.1
I_D(on)
Limited
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 72173
S-32419—Rev. B, 24-Nov-03