72173 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
25
V_GS = 10 thru 6 V
5V
20
20
P−CHANNEL
Transfer Characteristics
T_C = −55_C
25_C
15
10
5
0
0
0.16
4V
3V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
15
125_C
10
5
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
1000
Capacitance
0.12
0.08
0.04
V_GS = 6 V
V_GS = 10 V
0.00
0
5
10
15
20
25
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 6.4 A
8
800
C_iss
600
400
200
0
0
C_rss
6
C_oss
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 6.4 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
www.vishay.com
3