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72173 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET
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Si7501DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = −250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "25 V
VDS = 0 V, VGS = "20 V
VDS = −30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = −30 V, VGS = 0 V, TJ = 55_C
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w −5 V, VGS = −10 V
VDS p 5 V, VGS = 10 V
VGS = −10 V, ID = −6.4 A
VGS = 10 V, ID = 7.7 A
VGS = −6 V, ID = −5.3 A
VGS = 4.5 V, ID = 6.5 A
VDS = −15 V, ID = −6.4 A
VDS = 15 V, ID = 7.7 A
IS = −1.7 A, VGS = 0 V
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
P-Channel
VDS = −15 V, VGS = −10 V, ID = −6.4 A
Qgs
N-Channel
VDS = 15 V, VGS = 10 V, ID = 7.7 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
P-Channel
VDD = −15 V, RL = 5 W
ID ^ −3 A, VGEN = −10 V, RG = 1 W
N-Channel
VDD = 15 V, RL = 5 W
ID ^ 3 A, VGEN = 10 V, RG = 1 W
IF = −1.7 A, di/dt = 100 A/ms
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
P-Ch
N-Ch
−1.0
1.0
−3
V
3
P-Ch
N-Ch
"200
nA
"100
P-Ch
−1
N-Ch
P-Ch
1
mA
−5
N-Ch
5
P-Ch
−25
A
N-Ch
25
P-Ch
0.041 0.051
N-Ch
P-Ch
0.028 0.035
W
0.055 0.075
N-Ch
0.040 0.050
P-Ch
13
S
N-Ch
15
P-Ch
N-Ch
−0.80 −1.2
V
0.80
1.2
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
12.5
19
9
14
2.5
nC
2
3.6
1.3
9
W
3
10
15
10
15
20
30
15
25
25
40
ns
20
30
30
45
10
15
25
50
20
40
www.vishay.com
2
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
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