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VS-GP300TD60S Datasheet, PDF (7/9 Pages) Vishay Siliconix – Trench PT IGBT technology
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- G
P 300 T
VS-GP300TD60S
Vishay Semiconductors
D 60 S
1
2
3
4
5
6
7
8
1 - Vishay Semiconductors product
2 - Insulated gate bipolar transistor (IGBT)
3 - Trench PT IGBT technology
4 - Current rating (300 = 300 A)
5 - Circuit configuration (T = half bridge)
6 - Package indicator (D = dual INT-A-PAK low profile)
7 - Voltage rating (60 = 600 V)
8 - Speed / type (S = standard speed IGBT)
CIRCUIT CONFIGURATION
3
4
5
1
6
7
Dimensions
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95435
Revision: 20-May-16
7
Document Number: 95767
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000