VS-GP300TD60S Datasheet, PDF (3/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP300TD60S
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
Junction to case per leg
IGBT
diode
Case to sink per module
Mounting torque
case to heatsink: M6 screw
case to terminal 1, 2, 3: M5 screw
Weight
SYMBOL
T_J, T_Stg
R_thJC
R_thCS
MIN.
-40
-
-
-
4
2
-
TYP.
-
-
-
0.05
-
-
270
MAX.
150
0.11
0.4
-
6
4
-
UNITS
°C
°C/W
Nm
g
160
140
120
100
DC
80
60
40
20
0
0 100 200 300 400 500 600 700
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
600
500
400
300
200
T_J = 150 °C
T_J = 25 °C
100
T_J = 125 °C
0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics, V_GE = 15 V
600
V_GE = 12 V
500
V_GE = 15 V
V_GE = 18 V
400
V_GE = 9 V
300
200
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V_CE (V)
Fig. 3 - Typical IGBT Output Characteristics, T_J = 125 °C
1.6
1.5
400 A
1.4
1.3
300 A
1.2
1.1
1.0
100 A
0.9
0.8
0.7
20 40 60 80 100 120 140 160
T_J (°C)
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 20-May-16
3
Document Number: 95767
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