VS-GP300TD60S Datasheet, PDF (5/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP300TD60S
Vishay Semiconductors
60
55
50
45
40
35
30
25
20
15
10
5
0
0
Eoff
Eon
50 100 150 200 250 300 350
I_C (A)
Fig. 11 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 1.5 , V_GE = 15 V, L = 500 μH
10000
1000
100
t_d(on)
t_r
t_f
t_d(off)
10
0
50 100 150 200 250 300 350
I_C (A)
Fig. 12 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 1.5 , V_GE = 15 V, L = 500 μH
80
70
Eoff
60
50
40
Eon
30
20
10
0
0
5
10
15
20
25
30
R_g (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 300 A, V_GE = 15 V, L = 500 μH
10000
1000
t_d(off)
t_f
t_d(on)
t_r
100
0
5
10
15
20
25
30
R_g (Ω)
Fig. 14 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 300 A, V_GE = 15 V, L = 500 μH
260
240
220
200
180
T_J = 125 °C
160
140
T_J = 25 °C
120
100
200 400 600 800 1000 1200 1400 1600
dI_F/dt (A/μs)
Fig. 15 - Typical Diode Reverse Recovery Time vs. dI_F/dt
V_CC = 300 V, I_F = 300 A
140
130
120
110
100
90
80
70
60
50
40
30
20
10
200
T_J = 125 °C
T_J = 25 °C
400 600 800 1000 1200 1400 1600
dI_F/dt (A/μs)
Fig. 16 - Typical Diode Reverse Recovery Current vs. dI_F/dt
V_CC = 300 V, I_F = 300 A
Revision: 20-May-16
5
Document Number: 95767
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