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| VS-GP300TD60S Datasheet, PDF (2/9 Pages) Vishay Siliconix – Trench PT IGBT technology | |||
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VS-GP300TD60S
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
VBR(CES)
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage ïVGE(th)/ïT
Forward transconductance
gfe
Transfer characteristics
VGE
Collector to emitter leakage current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 150 A
VGE = 15 V, IC = 300 A
VGE = 15 V, IC = 150 A, TJ = 125 °C
VGE = 15 V, IC = 300 A, TJ = 125 °C
VCE = VGE, IC = 6.4 mA
VCE = VGE, IC = 6.4 mA, TJ = 125 °C
VCE = VGE, IC = 6.4 mA, (25 °C to 125 °C)
VCE = 20 V, IC = 50 A
VCE = 20 V, IC = 300 A
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IFM = 150 A
IFM = 300 A
IFM = 150 A, TJ = 125 °C
IFM = 300 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.12
1.30
1.03
1.26
6.0
3.4
-26
67
11.4
4.0
100
1.31
1.56
1.28
1.63
-
MAX.
-
1.21
1.45
-
-
8.8
-
-
-
-
150
-
1.41
1.75
-
-
± 500
UNITS
V
mV/°C
S
V
μA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 300 A, VCC = 300 V, VGE = 15 V,ï
Rg = 1.5 ï, L = 500 μH, TJ = 25 °C
IC = 300 A, VCC = 300 V, VGE = 15 V,ï
Rg = 1.5 ï, L = 500 μH, TJ = 125 °C
TJ = 150 °C, IC = 800 A, VCC = 300 Vï
VP = 600 V, Rg = 1.5 ïï¬ï VGE = 15 V to 0 V,
L = 500 μH
IF = 300 A, Rg = 1.5 ï,ï
VCC = 300 V, TJ = 25 °C
IF = 300 A, Rg = 1.5 ï,ï
VCC = 300 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
6.0
33
39
503
214
600
547
7.2
55.2
62.4
476
209
807
918
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
119
-
-
99
-
-
7.3
-
-
165
-
-
127
-
-
13
-
UNITS
mJ
ns
mJ
ns
ns
A
μC
ns
A
μC
Revision: 20-May-16
2
Document Number: 95767
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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