VS-GP300TD60S Datasheet, PDF (4/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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300
V_CE = 20 V
250
200
150
T_J = 125 °C
100
T_J = 25 °C
50
0
3 4 5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
8.0
7.0
T_J = 25 °C
6.0
5.0
4.0
T_J = 125 °C
3.0
2.0
1.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
I_C (mA)
Fig. 6 - Typical IGBT Gate Threshold Voltage
10 000
1000
100
10
1
1
10
100
1000
V_CE (V)
Fig. 7 - IGBT Reverse BIAS SOA T_J = 150 °C, V_GE = 15V
VS-GP300TD60S
Vishay Semiconductors
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
100
200
300
400
500
600
V_CES (V)
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
600
500
T_J = 25 °C
400
300
200
100
T_J = 150 °C
T_J = 125 °C
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V_F (V)
Fig. 9 - Typical Diode Forward Characteristics
160
140
120
100
DC
80
60
40
20
0
0 30 60 90 120 150 180 210 240
I_F - Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 20-May-16
4
Document Number: 95767
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