VS-GP300TD60S Datasheet, PDF (6/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP300TD60S
Vishay Semiconductors
16
14
12
T_J = 125 °C
10
8
6
4
T_J = 25 °C
2
0
200 400 600 800 1000 1200 1400 1600
dI_F/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dI_F/dt
V_CC = 300 V, I_F = 300 A
1
0.1
0.01
0.50
0.20
0.10
0.001
0.05
0.02
0.01
DC
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance Z_thJC Characteristics - (IGBT)
1
0.1
0.50
0.20
0.10
0.01
0.05
0.02
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance Z_thJC Characteristics - (Diode)
Revision: 20-May-16
6
Document Number: 95767
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