VS-GP300TD60S Datasheet, PDF (1/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A
Proprietary Vishay IGBT Silicon “L Series”
Dual INT-A-PAK Low Profile
PRODUCT SUMMARY
V_CES
I_C DC at T_C = 104 °C
V_CE(on) (typical) at 300 A, 25 °C
Speed
Package
Circuit
600 V
300 A
1.30 V
DC to 1 kHz
DIAP low profile
Half bridge
FEATURES
• Trench PT IGBT technology
• Low V_CE(on)
• Square RBSOA
• HEXFRED^® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al₂O₃ DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
RMS isolation voltage
Operating junction and storage temperature range
V_CES
I_C ⁽¹⁾
I_CM
I_LM
I_F
V_GE
P_D
V_ISOL
T_J, T_Stg
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case (V_RMS t = 1 s, T_J = 25 °C)
600
580
400
800
800
219
145
± 20
1136
636
3500
-40 to +150
Note
(1) _{Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals}
UNITS
V
A
V
W
V
°C
Revision: 20-May-16
1
Document Number: 95767
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000