VS-GA100TS120UPBF Datasheet, PDF (7/10 Pages) Vishay Siliconix – Very low conduction and switching losses

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VS-GA100TS120UPbF
Vishay Semiconductors
V_G Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0
t1 t2
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
50 V
6000 µF
100 V
L
1000 V V_C*
D.U.T.
0 - 480 V
R_L =
480 V
4 x I_C at 25 °C
* Driver same type as D.U.T.; V_C = 80 % of V_CE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I_d
Fig. 18 - Clamped Inductive Load Test Circuit
ORDERING INFORMATION TABLE
Fig. 19 - Pulsed Collector Current Test Circuit
Device code _{VS- G A 100 T S 120 U PbF}
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - Insulated gate bipolar transistor (IGBT)
3 - Generation 4, IGBT silicon, DBC construction
4 - Current rating (100 = 100 A)
5 - Circuit configuration (T = Half-bridge)
6 - Package indicator (INT-A-PAK)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = Ultrafast)
9 - PbF = Lead (Pb)-free
Revision: 26-Mar-12
7
Document Number: 94428
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