VS-GA100TS120UPBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – Very low conduction and switching losses

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VS-GA100TS120UPbF
Vishay Semiconductors
INT-A-PAK^™ “Half-Bridge” (Ultrafast Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED^® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) at 100 A, 25 °C
1200 V
182 A
2.25 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
I_CM
I_LM
I_FM
V_GE
V_ISOL
P_D
T_J
T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 93 °C
Repetitive rating; V_GE = 20 V, pulse width
limited by maximum junction temperature
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 85 °C
MAX.
1200
182
100
200
200
200
± 20
2500
520
270
- 40 to + 150
- 40 to + 125
UNITS
V
A
V
W
°C
Revision: 26-Mar-12
1
Document Number: 94428
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000