VS-GA100TS120UPBF Datasheet, PDF (3/10 Pages) Vishay Siliconix – Very low conduction and switching losses

www.vishay.com
VS-GA100TS120UPbF
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance, junction to case
IGBT
Diode
R_thJC
Thermal resistance, case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2 and 3
R_thCS
For screws M5 x 0.8
Weight of module
TYP.
-
-
0.1
-
-
200
MAX.
0.24
0.35
-
4.0
3.0
-
UNITS
°C/W
Nm
g
100
75
Square wave:
50
60 % of rated
voltage
25
0
0.1
Ideal diodes
1000
V_GE = 15 V
500 µs pulse width
100
125 °C
10
25 °C
Duty cycle: 50 %
T_J = 125 °C
T_sink = 90 °C
Gate drive as specified
Power dissipation = 170 W
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of Fundamental)
1000
V_GE = 20 V
500 µs pulse width
100
125 °C
25 °C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
V_CE - Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V_GE - Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Revision: 26-Mar-12
3
Document Number: 94428
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000