VS-GA100TS120UPBF Datasheet, PDF (5/10 Pages) Vishay Siliconix – Very low conduction and switching losses

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40
35
30
25
20
10
20
30
40
50
R_G - Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
I_C = 200 A
I_C = 100 A
10
I_C = 50 A
1
0
30
60
90
120
150
T_J - Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
60
50
40
30
20
10
0
0
50
100
150
200
I_C - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
VS-GA100TS120UPbF
Vishay Semiconductors
300
V_GE = 20 V
T_J = 125 °C
V_CE measured at terminal (peak voltage)
200
100
Safe operating area
0
0
300
600
900 1200 1500
V_CE - Collector to Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
1000
100
T_J = 125 °C
T_J = 25 °C
10
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_F - Forward Voltage Drop (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
16 000
12 000
V_R = 720 V
T_J = 125 °C
T_J = 25 °C
8000
4000
0
400
I_F = 200 A
I_F = 100 A
I_F = 50 A
800
1200
1600
2000
dI_F/dt (A/µs)
Fig. 14 - Typical Stored Charge vs. dI_F/dt
Revision: 26-Mar-12
5
Document Number: 94428
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