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VS-GA100TS120UPBF Datasheet, PDF (2/10 Pages) Vishay Siliconix – Very low conduction and switching losses
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VS-GA100TS120UPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage VGE(th)/TJ
Forward transconductance
gfe
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
IC = 1.25 mA
VCE = VGE, IC = 1.25 mA
VCE = 25 V, IC = 100 A
Pulse width 50 μs, single shot
Collector to emitter leaking current
Maximum diode forward voltage
Gate to emitter leakage current
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, IF = 100 A
VFM
VGE = 0 V, IF = 100 A, TJ = 125 °C
IGES
VGE = ± 20 V
MIN.
1200
-
-
3.0
-
-
-
-
-
-
-
TYP.
-
2.25
2
4.4
- 12
136
0.03
4.2
3.3
3.2
-
MAX.
-
3
2.4
6.0
-
UNITS
V
mV/°C
-
S
1.0
mA
10
4.0
V
3.8
250
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during tb
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff(1)
Ets (1)
td(on)
tr
td(off)
tf
Eon
Eoff(1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
dI(rec)M/dt
VCC = 400 V
IC = 124 A
Rg1 = 15 
Rg2 = 0 
IC = 100 A
VCC = 720 V
VGE = ± 15 V
TJ = 25 °C
Rg1 = 15 
Rg2 = 0 
IC = 100 A
VCC = 720 V
VGE = ± 15 V
TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 100 A
Rg1 = 15 
Rg2 = 0 
VCC = 720 V
dI/dt = 1300 A/μs
Note
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
830
140
275
570
85
581
276
7.6
6.8
14.4
571
89
606
649
10
16
26
18 672
830
161
149
104
7664
1916
MAX.
1245
210
412
-
-
-
-
-
-
-
-
-
-
-
-
-
45
-
-
-
-
-
-
-
UNITS
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/μs
Revision: 26-Mar-12
2
Document Number: 94428
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