VS-GA100TS120UPBF Datasheet, PDF (6/10 Pages) Vishay Siliconix – Very low conduction and switching losses

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VS-GA100TS120UPbF
Vishay Semiconductors
240
V_R = 720 V
T_J = 125 °C
T_J = 25 °C
200
I_F = 200 A
I_F = 100 A
I_F = 50 A
160
120
80
400
800
1200
1600
2000
dI_F/dt (A/µs)
Fig. 15 - Typical Reverse Recovery Time vs. dI_F/dt
L2
L1
R_G2
L
+
- ^VCC
-
+
R_G1
R_G2
+ V_G2
- V_G2
R_G1
L3
V_CC = 60 % of BV_CES
LS = L1 + L2 + L3
V_GE = ± 15 V
Fig. 17a - Test Circuit for Measurement of I_LM, E_on, E_off(diode), t_rr, Q_rr,
I_rr, t_d(on), t_r, t_d(off), t_f
+ V_GE
I_C ^{10 % VCE}
t_d(off)
90 % V_GE
V_CE
90 % I_C
I_C
5 % I_C
t_f
t1 + 5 µs
∫ Eoff = VVcCeEicICdtdt
t1
t1
t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
Defining E_off, t_d(off), t_f
250
200
I_F = 200 A
I_F = 100 A
I_F = 50 A
150
100
50
0
400
V_R = 720 V
T_J = 125 °C
T_J = 25 °C
800
1200
1600
2000
dI_F/dt (A/µs)
Fig. 16 - Typical Recovery Current vs. dI_F/dt
10 % + V_G
Gate voltage D.U.T.
+ V_G
V_CE
V_CC ^{10 % IC}
90 % I_C
t_d(on)
5 % V_CE
t_r
t1
D.U.T. voltage
and current
I_pk
I_C
t2
∫ Eon = VCE IC dt
t1
t2
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining E_on, t_d(on), t_r
I_C
t_rr
t_x
10 % V_CC
V_pk
I_rr
∫ ^trr
Q_rr = i_Id_C d_dt_t
t_x
10 % I_rr
V_CC
Diode recovery
waveforms
Diode reverse
recovery energy
t3
t4
∫ Erec = VD IC dt
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining E_rec, t_rr, Q_rr, I_rr
Revision: 26-Mar-12
6
Document Number: 94428
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