VS-GA100TS120UPBF Datasheet, PDF (4/10 Pages) Vishay Siliconix – Very low conduction and switching losses

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160
140
120
100
DC
80
60
40
20
0
0
40
80
120
160
200
Maximum DC Collector Current (A)
Fig. 4 - Case Temperature vs.
Maximum Collector Current
1
VS-GA100TS120UPbF
Vishay Semiconductors
3.0
V_GE = 15 V
500 µs pulse width
2.5
I_C = 200 A
I_C = 100 A
2.0
I_C = 50 A
1.5
0
30
60
90
120
150
T_J - Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1
0.01
0.0001
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂ .
2. Peak T_J = P_DM x Z_thJC + T_C
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
35 000
28 000
21 000
14 000
V_GE = 0 V, f = 1 MHz
C_ies = C_ge + C_gc, C_ce shorted
C_res = C_gc
C_ies
C_oes = C_ce + C_gc
C_oes
7000
C_res
0
1
10
100
V_CE - Collector to Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
20
V_CC = 400 V
I_C = 113 A
16
12
8
4
0
0
300
600
900
Q_G - Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Revision: 26-Mar-12
4
Document Number: 94428
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